PSMN1R7-25YLDX
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| Manufacturer | Nexperia |
| Package | --- |
| Datasheet | PSMN1R7-25YLDX |
| Description | --- |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Nexperia PSMN1R7-25YLDX
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 135W
- Total Gate Charge (Qg@Vgs) 46.7nC@10V
- Drain Source Voltage (Vdss) 25V
- Input Capacitance (Ciss@Vds) 3415pF@12V
- Continuous Drain Current (Id) 100A
- Gate Threshold Voltage (Vgs(th)@Id) 2.2V@1mA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 1.7mΩ@25A,10V
- Package SOT-669
- Manufacturer Nexperia
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