PSMN0R9-25YLDX
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| Manufacturer | Nexperia |
| Package | --- |
| Datasheet | PSMN0R9-25YLDX |
| Description | --- |
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规格
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Nexperia PSMN0R9-25YLDX
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 238W
- Total Gate Charge (Qg@Vgs) 89.8nC@10V
- Drain Source Voltage (Vdss) 25V
- Input Capacitance (Ciss@Vds) 6721pF@12V
- Continuous Drain Current (Id) 300A
- Gate Threshold Voltage (Vgs(th)@Id) 2.2V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 0.85mΩ@10V,25A
- Package SOT-669
- Manufacturer Nexperia
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