BSD314SPE H6327
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | BSD314SPE H6327 |
| Description | --- |
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Specifications
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Infineon Technologies BSD314SPE H6327
- Power Dissipation (Pd) 500mW
- Drain Source Voltage (Vdss) 30V
- Continuous Drain Current (Id) 1.5A
- Gate Threshold Voltage (Vgs(th)@Id) 2V@6.3uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 230mΩ@4.5V,1.2A
- Package SOT-363-6
- Manufacturer Infineon Technologies
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