BSP324 H6327
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | BSP324 H6327 |
| Description | --- |
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规格
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Infineon Technologies BSP324 H6327
- Power Dissipation (Pd) 1.8W
- Drain Source Voltage (Vdss) 400V
- Continuous Drain Current (Id) 170mA
- Gate Threshold Voltage (Vgs(th)@Id) 2.3V@94uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 25Ω@10V,170mA
- Package SOT-223-4
- Manufacturer Infineon Technologies
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