NCE4688-VB
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| Manufacturer | VBsemi Elec |
| Package | --- |
| Datasheet | NCE4688-VB |
| Description | --- |
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Specifications
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet VBsemi Elec NCE4688-VB
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 5W
- Total Gate Charge (Qg@Vgs) 10.5nC@4.5V
- Drain Source Voltage (Vdss) 60V
- Input Capacitance (Ciss@Vds) 1.1nF@30V
- Continuous Drain Current (Id) 7.6A
- Gate Threshold Voltage (Vgs(th)@Id) 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 55pF@30V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 25mΩ@10V,4.6A
- Package SOP-8
- Manufacturer VBsemi Elec
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