B772 B772
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| Manufacturer | LGE |
| Package | --- |
| Datasheet | B772 B772 |
| Description | --- |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet LGE B772 B772
- Transistor Type PNP
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 3A
- Power Dissipation (Pd) 500mW
- Transition Frequency (fT) 80MHz
- Collector Cut-Off Current (Icbo) 1uA
- Collector-Emitter Breakdown Voltage (Vceo) 30V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@2A,200mA
- Package SOT-89
- Manufacturer LGE
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