2N1613

2N1613

In 3 Shop

786,500 IRT

Technical specifications:
Manufacturer STMicroelectronics
Package TO-205AD, TO-39-3 Metal Can
Datasheet 2N1613, 2N1711
Description Bipolar (BJT) Transistor NPN 50V 500mA 80MHz 800mW Through Hole TO-39

sellers 2N1613


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Specifications

  • Manufacturer STMicroelectronics
  • Series -
  • Packaging Tube
  • Part Status Obsolete
  • Transistor Type NPN
  • Current - Collector (Ic) (Max) 500mA
  • Voltage - Collector Emitter Breakdown (Max) 50V
  • Vce Saturation (Max) @ Ib, Ic 1.5V @ 15mA, 150mA
  • Current - Collector Cutoff (Max) 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V
  • Power - Max 800mW
  • Frequency - Transition 80MHz
  • Operating Temperature -65°C ~ 200°C (TJ)
  • Mounting Type Through Hole
  • Package / Case TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package TO-39
  • Base Part Number 2N16
  • detail Bipolar (BJT) Transistor NPN 50V 500mA 80MHz 800mW Through Hole TO-39

Sellers


Price 
2N1613 2N1613 786500 IRT Online shopping

Last shop price change:

2N1613 2N1613 No price Online shopping

Last shop price change:

2N1613 2N1613 Not Available No price The price of this shop's products has not been updated! Online shopping

Last shop price change: