J113
In 3 Shop
Price is not yet specified
| Manufacturer | onsemi |
| Package | TO-226-3, TO-92-3 (TO-226AA) |
| Datasheet | J113 |
| Description | JFET N-Channel 35V 625mW Through Hole TO-92-3 |
sellers J113
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/JFETs
- FET Type -
- Datasheet onsemi J113
- Input Capacitance (Ciss@Vds) -
- Total Device Dissipation (Pd) -
- Drain Current (Idss@Vds,Vgs=0) -
- Gate-Source Breakdown Voltage (V(BR)GSS) -
- Gate-Source Cutoff Voltage (VGS(off)@ID) -
- Static Drain-Source On Resistance (RDS(on)) -
- Package TO-92-3
- Manufacturer onsemi
- Series -
- Packaging Bulk
- Part Status Active
- Voltage - Breakdown (V(BR)GSS) 35V
- Current - Drain (Idss) @ Vds (Vgs=0) 2mA @ 15V
- Voltage - Cutoff (VGS off) @ Id 500mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds -
- Resistance - RDS(On) 100 Ohms
- Power - Max 625mW
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package TO-92-3
- Base Part Number J113
- detail JFET N-Channel 35V 625mW Through Hole TO-92-3
Sellers
| Price | ||||
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J113 | No price |
Online shopping
Last shop price change: |
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|
|
J113 | Not Available No price |
Online shopping
Last shop price change: |
|
|
|
J113 | Not Available No price The price of this shop's products has not been updated! |
Online shopping
Last shop price change: |