BC846B

BC846B

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Technical specifications:
Manufacturer UMW(Youtai Semiconductor Co., Ltd.)
Package ---
Datasheet BC846B
Description ---

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Specifications

  • RoHS true
  • Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet UMW(Youtai Semiconductor Co., Ltd.) BC846B
  • Transistor Type NPN
  • Operating Temperature +150°C@(Tj)
  • Collector Current (Ic) 100mA
  • Power Dissipation (Pd) 200mW
  • Transition Frequency (fT) 100MHz
  • DC Current Gain (hFE@Ic,Vce) 200@2mA,5V
  • Collector Cut-Off Current (Icbo) 100nA
  • Collector-Emitter Breakdown Voltage (Vceo) 65V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@100mA,5mA
  • Package SOT-23-3
  • Manufacturer UMW(Youtai Semiconductor Co., Ltd.)

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BC846B BC846B No price Online shopping

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