2SB647

2SB647

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Technical specifications:
Manufacturer HL(Haolin Elec)
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sellers 2SB647


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Specifications

  • RoHS true
  • Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet HL(Haolin Elec) 2SB647
  • Transistor Type PNP
  • Operating Temperature -55°C~+150°C@(Tj)
  • Collector Current (Ic) 1A
  • Power Dissipation (Pd) 900mW
  • Transition Frequency (fT) 140MHz
  • DC Current Gain (hFE@Ic,Vce) 60@150mA,5V
  • Collector Cut-Off Current (Icbo) 10uA
  • Collector-Emitter Breakdown Voltage (Vceo) 80V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1V@500mA,50mA
  • Package SOT-89
  • Manufacturer HL(Haolin Elec)

Sellers


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2SB647 2SB647 No price Online shopping

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2SB647 2SB647 Not Available No price Online shopping

Last shop price change:

2SB647 2SB647 Not Available No price The price of this shop's products has not been updated! Online shopping

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