IRFB4229PBF
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | IRFB4229PBF |
| Description | --- |
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规格
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Infineon Technologies IRFB4229PBF
- Operating Temperature -40°C~+175°C@(Tj)
- Power Dissipation (Pd) 330W
- Total Gate Charge (Qg@Vgs) 110nC@10V
- Drain Source Voltage (Vdss) 250V
- Input Capacitance (Ciss@Vds) 4560pF@25V
- Continuous Drain Current (Id) 46A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 46mΩ@10V,26A
- Package TO-220
- Manufacturer Infineon Technologies