SI2325DS-T1-E3
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| Manufacturer | Vishay Intertech |
| Package | --- |
| Datasheet | SI2325DS-T1-E3 |
| Description | --- |
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规格
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Vishay Intertech SI2325DS-T1-E3
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 750mW
- Total Gate Charge (Qg@Vgs) 12nC@10V
- Drain Source Voltage (Vdss) 150V
- Input Capacitance (Ciss@Vds) 510pF@25V
- Continuous Drain Current (Id) 530mA
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 1.2Ω@10V,500mA
- Package SOT-23
- Manufacturer Vishay Intertech
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