BCR 555 E6327
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | BCR 555 E6327 |
| Description | --- |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/Digital Transistors
- Datasheet Infineon Technologies BCR 555 E6327
- Transistor Type One PNP - Pre-Biased
- Collector Current (Ic) 500mA
- Power Dissipation (Pd) 330mW
- Transition Frequency (fT) 150MHz
- DC Current Gain (hFE@Ic,Vce) 70@50mA,5V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@50mA,2.5mA
- Package SOT-23
- Manufacturer Infineon Technologies
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