IPB180N06S4-H1
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | IPB180N06S4-H1 |
| Description | --- |
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规格
- RoHS true
- Type -
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Infineon Technologies IPB180N06S4-H1
- Power Dissipation (Pd) -
- Total Gate Charge (Qg@Vgs) -
- Drain Source Voltage (Vdss) -
- Input Capacitance (Ciss@Vds) -
- Continuous Drain Current (Id) -
- Gate Threshold Voltage (Vgs(th)@Id) -
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) -
- Package TO-263-7
- Manufacturer Infineon Technologies
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