BSS192PH6327FTSA1
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | BSS192PH6327FTSA1 |
| Description | --- |
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Specifications
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Infineon Technologies BSS192PH6327FTSA1
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 1W
- Total Gate Charge (Qg@Vgs) 6.1nC@10V
- Drain Source Voltage (Vdss) 250V
- Input Capacitance (Ciss@Vds) 104pF@25V
- Continuous Drain Current (Id) 190mA
- Gate Threshold Voltage (Vgs(th)@Id) 2V@130uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 12Ω@10V,190mA
- Package SOT-89-3
- Manufacturer Infineon Technologies
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