TSA1036CX RFG

TSA1036CX RFG

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Technical specifications:
Manufacturer Taiwan Semiconductor
Package ---
Datasheet TSA1036CX RFG
Description ---

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Specifications

  • RoHS true
  • Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet Taiwan Semiconductor TSA1036CX RFG
  • Transistor Type NPN
  • Operating Temperature +150°C@(Tj)
  • Collector Current (Ic) 600mA
  • Power Dissipation (Pd) 225mW
  • Transition Frequency (fT) 200MHz
  • DC Current Gain (hFE@Ic,Vce) 100@150mA,10V
  • Collector Cut-Off Current (Icbo) 10nA
  • Collector-Emitter Breakdown Voltage (Vceo) 60V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 400mV@150mA,15mA
  • Package SOT-346
  • Manufacturer Taiwan Semiconductor

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