BCW 61B E6327
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | BCW 61B E6327 |
| Description | --- |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Infineon Technologies BCW 61B E6327
- Transistor Type PNP
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 100mA
- Power Dissipation (Pd) 330mW
- Transition Frequency (fT) 250MHz
- DC Current Gain (hFE@Ic,Vce) 250@2mA,5V
- Collector Cut-Off Current (Icbo) 20nA
- Collector-Emitter Breakdown Voltage (Vceo) 32V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 200mV@50mA,1.25mA
- Package SOT-23
- Manufacturer Infineon Technologies
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