FQD12N20LTM-F085P
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| Manufacturer | onsemi |
| Package | --- |
| Datasheet | FQD12N20LTM-F085P |
| Description | --- |
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规格
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FQD12N20LTM-F085P
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 2.5W;55W
- Total Gate Charge (Qg@Vgs) 21nC@5V
- Drain Source Voltage (Vdss) 200V
- Input Capacitance (Ciss@Vds) 1080pF@25V
- Continuous Drain Current (Id) 9A
- Gate Threshold Voltage (Vgs(th)@Id) 2V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 280mΩ@4.5A,10V
- Package TO-252
- Manufacturer onsemi
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