BC856BLT1G
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| Manufacturer | onsemi |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Datasheet | BC856ALT1G Series |
| Description | Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236) |
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مشخصات BC856BLT1G
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi BC856BLT1G
- Transistor Type PNP
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 100mA
- Power Dissipation (Pd) 300mW
- Transition Frequency (fT) 100MHz
- DC Current Gain (hFE@Ic,Vce) 220@2mA,5V
- Collector Cut-Off Current (Icbo) 15nA
- Collector-Emitter Breakdown Voltage (Vceo) 65V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 650mV@100mA,5mA
- Package SOT-23(TO-236)
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- Current - Collector (Ic) (Max) 100mA
- Voltage - Collector Emitter Breakdown (Max) 65V
- Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max) 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V
- Power - Max 300mW
- Frequency - Transition 100MHz
- Mounting Type Surface Mount
- Package / Case TO-236-3, SC-59, SOT-23-3
- Supplier Device Package SOT-23-3 (TO-236)
- Base Part Number BC856
- detail Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)
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