FDP33N25 TO-220
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| Manufacturer | ON Semiconductor |
| Package | TO-220-3 |
| Datasheet | FDP33N25 |
| Description | N-Channel 250V 33A (Tc) 235W (Tc) Through Hole TO-220-3 |
فروشنده های FDP33N25 TO-220
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مشخصات FDP33N25 TO-220
- Manufacturer ON Semiconductor
- Series UniFET™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 250V
- Current - Continuous Drain (Id) @ 25°C 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 94mOhm @ 16.5A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 2135pF @ 25V
- FET Feature -
- Power Dissipation (Max) 235W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220-3
- Package / Case TO-220-3
- Base Part Number FDP33
- detail N-Channel 250V 33A (Tc) 235W (Tc) Through Hole TO-220-3
فروشنده های FDP33N25 TO-220
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