FDS8958B

FDS8958B

FDS8958B

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Manufacturer onsemi
Package 8-SOIC (0.154", 3.90mm Width)
Datasheet FDS8958B
Description Mosfet Array N and P-Channel 30V 6.4A, 4.5A 900mW Surface Mount 8-SOIC

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مشخصات

  • RoHS true
  • Type 1PCSN-Channel&1PCSP-Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet onsemi FDS8958B
  • Operating Temperature -55°C~+150°C@(Tj)
  • Power Dissipation (Pd) 900mW
  • Total Gate Charge (Qg@Vgs) 12nC@10V
  • Drain Source Voltage (Vdss) 30V
  • Input Capacitance (Ciss@Vds) 540pF@15V
  • Continuous Drain Current (Id) 6.4A;4.5A
  • Gate Threshold Voltage (Vgs(th)@Id) 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds) -
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 26mΩ@6.4A,10V
  • Package SOP-8
  • Manufacturer onsemi
  • Series PowerTrench®
  • Packaging Cut Tape (CT)
  • Part Status Active
  • FET Type N and P-Channel
  • FET Feature Logic Level Gate
  • Drain to Source Voltage (Vdss) 30V
  • Current - Continuous Drain (Id) @ 25°C 6.4A, 4.5A
  • Rds On (Max) @ Id, Vgs 26mOhm @ 6.4A, 10V
  • Vgs(th) (Max) @ Id 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 540pF @ 15V
  • Power - Max 900mW
  • Mounting Type Surface Mount
  • Package / Case 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package 8-SOIC
  • Base Part Number FDS89
  • detail Mosfet Array N and P-Channel 30V 6.4A, 4.5A 900mW Surface Mount 8-SOIC

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