IS61WV51216EDALL-20BLI-TR
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| Manufacturer | ISSI(Integrated Silicon Solution) |
| Package | 48-TFBGA |
| Datasheet | IS61WV51216EDALL, IS6xWV51216EDBLL |
| Description | SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 20ns 48-TFBGA (6x8) |
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Specifications IS61WV51216EDALL-20BLI-TR
- RoHS true
- Category Memory/SRAM
- Datasheet ISSI(Integrated Silicon Solution) IS61WV51216EDALL-20BLI-TR
- Memory Size 8Mbit
- upply Voltage (Vcc) 1.65V~2.2V
- Operating Temperature -40°C~+85°C
- Package TFBGA-48(6x8)
- Manufacturer ISSI(Integrated Silicon Solution)
- Series -
- Packaging Tray
- Part Status Active
- Memory Type Volatile
- Memory Format SRAM
- Technology SRAM - Asynchronous
- Memory Interface Parallel
- Write Cycle Time - Word, Page 20ns
- Access Time 20ns
- Voltage - Supply 1.65V ~ 2.2V
- Mounting Type Surface Mount
- Package / Case 48-TFBGA
- Supplier Device Package 48-TFBGA (6x8)
- detail SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 20ns 48-TFBGA (6x8)
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