FDS2672
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| Manufacturer | onsemi |
| Package | 8-SOIC (0.154", 3.90mm Width) |
| Datasheet | FDS2672 |
| Description | N-Channel 200V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC |
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مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDS2672
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 2.5W
- Total Gate Charge (Qg@Vgs) 46nC@10V
- Drain Source Voltage (Vdss) 200V
- Input Capacitance (Ciss@Vds) 2535pF@100V
- Continuous Drain Current (Id) 3.9A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 70mΩ@10V,3.9A
- Package SOP-8
- Manufacturer onsemi
- Series UltraFET™
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 200V
- Current - Continuous Drain (Id) @ 25°C 3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Rds On (Max) @ Id, Vgs 70mOhm @ 3.9A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 2535pF @ 100V
- FET Feature -
- Power Dissipation (Max) 2.5W (Ta)
- Mounting Type Surface Mount
- Supplier Device Package 8-SOIC
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Base Part Number FDS26
- detail N-Channel 200V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
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