FQD3P50TM
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| Manufacturer | onsemi |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | FQD3P50 |
| Description | P-Channel 500V 2.1A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak |
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مشخصات
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FQD3P50TM
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 2.5W;50W
- Total Gate Charge (Qg@Vgs) 23nC@10V
- Drain Source Voltage (Vdss) 500V
- Input Capacitance (Ciss@Vds) 660pF@25V
- Continuous Drain Current (Id) 2.1A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 4.9Ω@10V,1.05A
- Package TO-252
- Manufacturer onsemi
- Series QFET®
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 500V
- Current - Continuous Drain (Id) @ 25°C 2.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 4.9Ohm @ 1.05A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 660pF @ 25V
- FET Feature -
- Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package D-Pak
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number FQD3
- detail P-Channel 500V 2.1A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak
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