FQP47P06
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| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | FQP47P06 |
| Description | P-Channel 60V 47A (Tc) 160W (Tc) Through Hole TO-220-3 |
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مشخصات FQP47P06
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FQP47P06
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 160W
- Total Gate Charge (Qg@Vgs) 110nC@10V
- Drain Source Voltage (Vdss) 60V
- Input Capacitance (Ciss@Vds) 3600pF@25V
- Continuous Drain Current (Id) 47A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 26mΩ@10V,23.5A
- Package TO-220F
- Manufacturer onsemi
- Series QFET®
- Packaging Tube
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 26mOhm @ 23.5A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
- FET Feature -
- Power Dissipation (Max) 160W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-220-3
- Package / Case TO-220-3
- Base Part Number FQP4
- detail P-Channel 60V 47A (Tc) 160W (Tc) Through Hole TO-220-3
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