KSC1815YTA
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| Manufacturer | onsemi |
| Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Datasheet | KSC1815 |
| Description | Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 400mW Through Hole TO-92-3 |
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مشخصات KSC1815YTA
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi KSC1815YTA
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 150mA
- Power Dissipation (Pd) 400mW
- Transition Frequency (fT) 80MHz
- DC Current Gain (hFE@Ic,Vce) 70@2mA,6V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 100mV@100mA,10mA
- Package TO-92-3
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- Current - Collector (Ic) (Max) 150mA
- Voltage - Collector Emitter Breakdown (Max) 50V
- Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA, 6V
- Power - Max 400mW
- Frequency - Transition 80MHz
- Mounting Type Through Hole
- Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package TO-92-3
- Base Part Number KSC1815
- detail Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 400mW Through Hole TO-92-3
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