KSA916YTA
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| Manufacturer | onsemi |
| Package | TO-226-3, TO-92-3 Long Body (Formed Leads) |
| Datasheet | KSA916 |
| Description | Bipolar (BJT) Transistor PNP 120V 800mA 120MHz 900mW Through Hole TO-92-3 |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi KSA916YTA
- Transistor Type PNP
- Collector Current (Ic) 800mA
- Power Dissipation (Pd) 900mW
- Transition Frequency (fT) 120MHz
- DC Current Gain (hFE@Ic,Vce) 100@100mA,5V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 120V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1V@50mA,500mA
- Package TO-92-3
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- Current - Collector (Ic) (Max) 800mA
- Voltage - Collector Emitter Breakdown (Max) 120V
- Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V
- Power - Max 900mW
- Frequency - Transition 120MHz
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device Package TO-92-3
- Base Part Number KSA916
- detail Bipolar (BJT) Transistor PNP 120V 800mA 120MHz 900mW Through Hole TO-92-3
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