CPH3362-TL-W
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| Manufacturer | onsemi |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Datasheet | CPH3362 |
| Description | P-Channel 100V 700mA (Ta) 1W (Ta) Surface Mount 3-CPH |
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مشخصات
- RoHS true
- Type -
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi CPH3362-TL-W
- Power Dissipation (Pd) -
- Total Gate Charge (Qg@Vgs) -
- Drain Source Voltage (Vdss) -
- Input Capacitance (Ciss@Vds) -
- Continuous Drain Current (Id) -
- Gate Threshold Voltage (Vgs(th)@Id) -
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) -
- Package SOT-23
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 700mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
- Rds On (Max) @ Id, Vgs 1.7Ohm @ 700mA, 10V
- Vgs(th) (Max) @ Id 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 3.7nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 142pF @ 20V
- FET Feature -
- Power Dissipation (Max) 1W (Ta)
- Operating Temperature 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 3-CPH
- Package / Case TO-236-3, SC-59, SOT-23-3
- Base Part Number CPH336
- detail P-Channel 100V 700mA (Ta) 1W (Ta) Surface Mount 3-CPH
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