PZT751T1G
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| Manufacturer | onsemi |
| Package | TO-261-4, TO-261AA |
| Datasheet | PZT751T1 |
| Description | Bipolar (BJT) Transistor PNP 60V 2A 75MHz 800mW Surface Mount SOT-223 |
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مشخصات PZT751T1G
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi PZT751T1G
- Transistor Type PNP
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 2A
- Power Dissipation (Pd) 800mW
- Transition Frequency (fT) 75MHz
- DC Current Gain (hFE@Ic,Vce) 75@1A,2V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 60V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@2A,200mA
- Package SOT-223
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- Current - Collector (Ic) (Max) 2A
- Voltage - Collector Emitter Breakdown (Max) 60V
- Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 1A, 2V
- Power - Max 800mW
- Frequency - Transition 75MHz
- Mounting Type Surface Mount
- Package / Case TO-261-4, TO-261AA
- Supplier Device Package SOT-223
- Base Part Number PZT751
- detail Bipolar (BJT) Transistor PNP 60V 2A 75MHz 800mW Surface Mount SOT-223
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