NSS60600MZ4T1G

NSS60600MZ4T1G

60V 800mW 120@1A,2V 6A PNP SOT-223 Bipolar Transistors - BJT ROHS

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مشخصات فنی:
Manufacturer onsemi
Package TO-261-4, TO-261AA
Datasheet NSS60600MZ4T1G
Description Bipolar (BJT) Transistor PNP 60V 6A 100MHz 800mW Surface Mount SOT-223

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مشخصات

  • RoHS true
  • Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet onsemi NSS60600MZ4T1G
  • Transistor Type PNP
  • Operating Temperature -55°C~+150°C@(Tj)
  • Collector Current (Ic) 6A
  • Power Dissipation (Pd) 800mW
  • Transition Frequency (fT) 100MHz
  • DC Current Gain (hFE@Ic,Vce) 120@1A,2V
  • Collector Cut-Off Current (Icbo) 100nA
  • Collector-Emitter Breakdown Voltage (Vceo) 60V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 350mV@600mA,6A
  • Package SOT-223
  • Manufacturer onsemi
  • Series -
  • Packaging Cut Tape (CT)
  • Part Status Active
  • Current - Collector (Ic) (Max) 6A
  • Voltage - Collector Emitter Breakdown (Max) 60V
  • Vce Saturation (Max) @ Ib, Ic 350mV @ 600mA, 6A
  • Current - Collector Cutoff (Max) 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A, 2V
  • Power - Max 800mW
  • Frequency - Transition 100MHz
  • Mounting Type Surface Mount
  • Package / Case TO-261-4, TO-261AA
  • Supplier Device Package SOT-223
  • Base Part Number NSS606
  • detail Bipolar (BJT) Transistor PNP 60V 6A 100MHz 800mW Surface Mount SOT-223

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