MJD210T4G
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| Manufacturer | onsemi |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | MJD200, MJD210 |
| Description | Bipolar (BJT) Transistor PNP 25V 5A 65MHz 1.4W Surface Mount DPAK |
sellers MJD210T4G
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi MJD210T4G
- Transistor Type PNP
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 5A
- Power Dissipation (Pd) 1.4W
- Transition Frequency (fT) 65MHz
- DC Current Gain (hFE@Ic,Vce) 45@2A,1V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 25V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1.8V@5A,1A
- Package TO-252
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Obsolete
- Current - Collector (Ic) (Max) 5A
- Voltage - Collector Emitter Breakdown (Max) 25V
- Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A, 1V
- Power - Max 1.4W
- Frequency - Transition 65MHz
- Mounting Type Surface Mount
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package DPAK
- Base Part Number MJD21
- detail Bipolar (BJT) Transistor PNP 25V 5A 65MHz 1.4W Surface Mount DPAK
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