NTTFS4C06NTWG

NTTFS4C06NTWG

30V 67A 3.4mΩ@10V,30A 31W N Channel DFN-8(3x3) MOSFETs ROHS

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مشخصات فنی:
Manufacturer onsemi
Package 8-PowerWDFN
Datasheet NTTFS4C06N
Description N-Channel 30V 11A (Ta), 67A (Tc) 810mW (Ta), 31W (Tc) Surface Mount 8-WDFN (3.3x3.3)

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مشخصات

  • RoHS true
  • Type N Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet onsemi NTTFS4C06NTWG
  • Operating Temperature -55°C~+150°C@(Tj)
  • Power Dissipation (Pd) 31W
  • Total Gate Charge (Qg@Vgs) 11.6nC@4.5V
  • Drain Source Voltage (Vdss) 30V
  • Input Capacitance (Ciss@Vds) 1.683nF@15V
  • Continuous Drain Current (Id) 67A
  • Gate Threshold Voltage (Vgs(th)@Id) 2.2V@250uA
  • Reverse Transfer Capacitance (Crss@Vds) 40pF@15V
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 3.4mΩ@10V,30A
  • Package DFN-8(3x3)
  • Manufacturer onsemi
  • Series -
  • Packaging Cut Tape (CT)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 30V
  • Current - Continuous Drain (Id) @ 25°C 11A (Ta), 67A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Rds On (Max) @ Id, Vgs 4.2mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
  • Vgs (Max) ±20V
  • Input Capacitance (Ciss) (Max) @ Vds 3366pF @ 15V
  • FET Feature -
  • Power Dissipation (Max) 810mW (Ta), 31W (Tc)
  • Mounting Type Surface Mount
  • Supplier Device Package 8-WDFN (3.3x3.3)
  • Package / Case 8-PowerWDFN
  • Base Part Number NTTFS4
  • detail N-Channel 30V 11A (Ta), 67A (Tc) 810mW (Ta), 31W (Tc) Surface Mount 8-WDFN (3.3x3.3)

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