MJD243T4G
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| Manufacturer | onsemi |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | MJD243,253 |
| Description | Bipolar (BJT) Transistor NPN 100V 4A 40MHz 12.5W Surface Mount DPAK |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi MJD243T4G
- Transistor Type NPN
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 4A
- Power Dissipation (Pd) 1.4W
- Transition Frequency (fT) 40MHz
- DC Current Gain (hFE@Ic,Vce) 40@200mA,1V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 100V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 600mV@1A,100mA
- Package DPAK-3
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Obsolete
- Current - Collector (Ic) (Max) 4A
- Voltage - Collector Emitter Breakdown (Max) 100V
- Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) -
- DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA, 1V
- Power - Max 12.5W
- Frequency - Transition 40MHz
- Mounting Type Surface Mount
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package DPAK
- Base Part Number MJD24
- detail Bipolar (BJT) Transistor NPN 100V 4A 40MHz 12.5W Surface Mount DPAK
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