BD13716S
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| Manufacturer | ON Semiconductor |
| Package | TO-225AA, TO-126-3 |
| Datasheet | BD135/137/139 |
| Description | Bipolar (BJT) Transistor NPN 60V 1.5A 1.25W Through Hole TO-126-3 |
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مشخصات
- Manufacturer ON Semiconductor
- Series -
- Packaging Bulk
- Part Status Active
- Transistor Type NPN
- Current - Collector (Ic) (Max) 1.5A
- Voltage - Collector Emitter Breakdown (Max) 60V
- Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V
- Power - Max 1.25W
- Frequency - Transition -
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-225AA, TO-126-3
- Supplier Device Package TO-126-3
- Base Part Number BD137
- detail Bipolar (BJT) Transistor NPN 60V 1.5A 1.25W Through Hole TO-126-3
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