KSC3503DS
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| Manufacturer | onsemi |
| Package | TO-225AA, TO-126-3 |
| Datasheet | 2SC3503, KSC3503 |
| Description | Bipolar (BJT) Transistor NPN 300V 100mA 150MHz 7W Through Hole TO-126-3 |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi KSC3503DS
- Transistor Type NPN
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 100mA
- Power Dissipation (Pd) 7W
- Transition Frequency (fT) 150MHz
- DC Current Gain (hFE@Ic,Vce) 60@10mA,10V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 300V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 600mV@20mA,2mA
- Package TO-126-3
- Manufacturer onsemi
- Series -
- Packaging Bulk
- Part Status Active
- Current - Collector (Ic) (Max) 100mA
- Voltage - Collector Emitter Breakdown (Max) 300V
- Vce Saturation (Max) @ Ib, Ic 600mV @ 2mA, 20mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 10V
- Power - Max 7W
- Frequency - Transition 150MHz
- Mounting Type Through Hole
- Package / Case TO-225AA, TO-126-3
- Supplier Device Package TO-126-3
- Base Part Number KSC3503
- detail Bipolar (BJT) Transistor NPN 300V 100mA 150MHz 7W Through Hole TO-126-3
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