FQD4P40TM
در 0 فروشگاه قیمت هنوز مشخص نشده است
این محصول در حال حاضر فروشنده ای ندارد!
| Manufacturer | onsemi |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | FQD4P40 |
| Description | P-Channel 400V 2.7A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak |
فروشنده های FQD4P40TM
فروشگاهی یافت نشد
تغییرات قیمت
مشخصات FQD4P40TM
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FQD4P40TM
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 2.5W;50W
- Total Gate Charge (Qg@Vgs) 23nC@10V
- Drain Source Voltage (Vdss) 400V
- Input Capacitance (Ciss@Vds) 680pF@25V
- Continuous Drain Current (Id) 2.7A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 3.1Ω@1.35A,10V
- Package TO-252
- Manufacturer onsemi
- Series QFET®
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 400V
- Current - Continuous Drain (Id) @ 25°C 2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 3.1Ohm @ 1.35A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 680pF @ 25V
- FET Feature -
- Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package D-Pak
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number FQD4
- detail P-Channel 400V 2.7A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak
فروشنده های FQD4P40TM
فروشگاهی یافت نشد