FQD10N20LTM
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| Manufacturer | onsemi |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | FQD10N20L |
| Description | N-Channel 200V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Surface Mount TO-252, (D-Pak) |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FQD10N20LTM
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 2.5W;51W
- Total Gate Charge (Qg@Vgs) 17nC@5V
- Drain Source Voltage (Vdss) 200V
- Input Capacitance (Ciss@Vds) 830pF@25V
- Continuous Drain Current (Id) 7.6A
- Gate Threshold Voltage (Vgs(th)@Id) 2V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 360mΩ@3.8A,10V
- Package TO-252
- Manufacturer onsemi
- Series QFET®
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 200V
- Current - Continuous Drain (Id) @ 25°C 7.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
- Rds On (Max) @ Id, Vgs 360mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 830pF @ 25V
- FET Feature -
- Power Dissipation (Max) 2.5W (Ta), 51W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package TO-252, (D-Pak)
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number FQD1
- detail N-Channel 200V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Surface Mount TO-252, (D-Pak)
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