2N5190G
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| Manufacturer | onsemi |
| Package | TO-225AA, TO-126-3 |
| Datasheet | 2N5190, 91, 92 |
| Description | Bipolar (BJT) Transistor NPN 40V 4A 2MHz 40W Through Hole TO-225AA |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi 2N5190G
- Transistor Type NPN
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 4A
- Power Dissipation (Pd) 40W
- Transition Frequency (fT) 2MHz
- DC Current Gain (hFE@Ic,Vce) 25@1.5A,2V
- Collector Cut-Off Current (Icbo) 100uA
- Collector-Emitter Breakdown Voltage (Vceo) 40V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1.4V@4A,1A
- Package TO-225-3
- Manufacturer onsemi
- Series -
- Packaging Bulk
- Part Status Obsolete
- Current - Collector (Ic) (Max) 4A
- Voltage - Collector Emitter Breakdown (Max) 40V
- Vce Saturation (Max) @ Ib, Ic 1.4V @ 1A, 4A
- Current - Collector Cutoff (Max) 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1.5A, 2V
- Power - Max 40W
- Frequency - Transition 2MHz
- Mounting Type Through Hole
- Package / Case TO-225AA, TO-126-3
- Supplier Device Package TO-225AA
- Base Part Number 2N5190
- detail Bipolar (BJT) Transistor NPN 40V 4A 2MHz 40W Through Hole TO-225AA
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