KSB596YTU
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| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | KSB596 |
| Description | Bipolar (BJT) Transistor PNP 80V 4A 3MHz 30W Through Hole TO-220-3 |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi KSB596YTU
- Package TO-220
- Manufacturer onsemi
- Series -
- Packaging Bulk
- Part Status Obsolete
- Transistor Type PNP
- Current - Collector (Ic) (Max) 4A
- Voltage - Collector Emitter Breakdown (Max) 80V
- Vce Saturation (Max) @ Ib, Ic 1.7V @ 300mA, 3A
- Current - Collector Cutoff (Max) 70µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 5V
- Power - Max 30W
- Frequency - Transition 3MHz
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-220-3
- Supplier Device Package TO-220-3
- Base Part Number KSB59
- detail Bipolar (BJT) Transistor PNP 80V 4A 3MHz 30W Through Hole TO-220-3
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