FDP085N10A-F102
در 0 فروشگاه قیمت هنوز مشخص نشده است
این محصول در حال حاضر فروشنده ای ندارد!
| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | FDP085N10A_F102 |
| Description | N-Channel 100V 96A (Tc) 188W (Tc) Through Hole TO-220-3 |
فروشنده های FDP085N10A-F102
فروشگاهی یافت نشد
مشخصات FDP085N10A-F102
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDP085N10A-F102
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 188W
- Total Gate Charge (Qg@Vgs) 40nC@10V
- Drain Source Voltage (Vdss) 100V
- Input Capacitance (Ciss@Vds) 2695pF@50V
- Continuous Drain Current (Id) 96A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 8.5mΩ@96A,10V
- Package TO-220
- Manufacturer onsemi
- Series PowerTrench®
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 8.5mOhm @ 96A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 2695pF @ 50V
- FET Feature -
- Power Dissipation (Max) 188W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-220-3
- Package / Case TO-220-3
- Base Part Number FDP085
- detail N-Channel 100V 96A (Tc) 188W (Tc) Through Hole TO-220-3
فروشنده های FDP085N10A-F102
فروشگاهی یافت نشد
