FCA35N60
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| Manufacturer | onsemi |
| Package | TO-3P-3, SC-65-3 |
| Datasheet | FCA35N60 |
| Description | N-Channel 600V 35A (Tc) 312.5W (Tc) Through Hole TO-3PN |
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مشخصات FCA35N60
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FCA35N60
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 312.5W
- Total Gate Charge (Qg@Vgs) 181nC@10V
- Drain Source Voltage (Vdss) 600V
- Input Capacitance (Ciss@Vds) 6640pF@25V
- Continuous Drain Current (Id) 35A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 98mΩ@10V,17.5A
- Package TO-3P
- Manufacturer onsemi
- Series SuperFET™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 98mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 181nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 6640pF @ 25V
- FET Feature -
- Power Dissipation (Max) 312.5W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-3PN
- Package / Case TO-3P-3, SC-65-3
- Base Part Number FCA35
- detail N-Channel 600V 35A (Tc) 312.5W (Tc) Through Hole TO-3PN
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