NTMFS6H800NT1G
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| Manufacturer | onsemi |
| Package | 8-PowerTDFN, 5 Leads |
| Datasheet | NTMFS6H800N |
| Description | N-Channel 80V 28A (Ta), 203A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL) |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi NTMFS6H800NT1G
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 3.8W;200W
- Total Gate Charge (Qg@Vgs) 85nC@10V
- Drain Source Voltage (Vdss) 80V
- Input Capacitance (Ciss@Vds) 5530pF@40V
- Continuous Drain Current (Id) 28A;203A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@330uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 2.1mΩ@50A,10V
- Package SO-8FL
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 80V
- Current - Continuous Drain (Id) @ 25°C 28A (Ta), 203A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Rds On (Max) @ Id, Vgs 2.1mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id 4V @ 330µA
- Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 5530pF @ 40V
- FET Feature -
- Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package 5-DFN (5x6) (8-SOFL)
- Package / Case 8-PowerTDFN, 5 Leads
- Base Part Number NTMFS6
- detail N-Channel 80V 28A (Ta), 203A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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