NST847BPDP6T5G
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| Manufacturer | onsemi |
| Package | SOT-963 |
| Datasheet | NST847BPDP6T5G |
| Description | Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 350mW Surface Mount SOT-963 |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi NST847BPDP6T5G
- Transistor Type 1PCSNPN&1PCSPNP
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 100mA
- Transition Frequency (fT) 100MHz
- DC Current Gain (hFE@Ic,Vce) 200@2mA,5V;220@2mA,5V
- Collector Cut-Off Current (Icbo) 15nA
- Collector-Emitter Breakdown Voltage (Vceo) 45V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 600mV@5mA,100mA;700mV@5mA,100mA
- Package SOT-963
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- Current - Collector (Ic) (Max) 100mA
- Voltage - Collector Emitter Breakdown (Max) 45V
- Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA / 700mV @ 5mA, 100mA
- Current - Collector Cutoff (Max) 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V / 220 @ 2mA, 5V
- Power - Max 350mW
- Frequency - Transition 100MHz
- Mounting Type Surface Mount
- Package / Case SOT-963
- Supplier Device Package SOT-963
- Base Part Number NST847
- detail Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 350mW Surface Mount SOT-963
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