NVC3S5A51PLZT1G

NVC3S5A51PLZT1G

60V 1.8A 190mΩ@10V,1A 1.2W P Channel CPH-3 MOSFETs ROHS

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مشخصات فنی:
Manufacturer onsemi
Package TO-236-3, SC-59, SOT-23-3
Datasheet NVC3S5A51PLZ
Description P-Channel 60V 1.8A (Ta) 1.2W (Ta) Surface Mount 3-CPH

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مشخصات

  • RoHS true
  • Type P Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet onsemi NVC3S5A51PLZT1G
  • Operating Temperature -55°C~+175°C@(Tj)
  • Power Dissipation (Pd) 1.2W
  • Total Gate Charge (Qg@Vgs) 6nC@10V
  • Drain Source Voltage (Vdss) 60V
  • Input Capacitance (Ciss@Vds) 262pF@20V
  • Continuous Drain Current (Id) 1.8A
  • Gate Threshold Voltage (Vgs(th)@Id) 2.6V@1mA
  • Reverse Transfer Capacitance (Crss@Vds) 19pF@20V
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 190mΩ@10V,1A
  • Package CPH-3
  • Manufacturer onsemi
  • Series -
  • Packaging Cut Tape (CT)
  • Part Status Active
  • FET Type P-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 60V
  • Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
  • Rds On (Max) @ Id, Vgs 250mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
  • Vgs (Max) ±20V
  • Input Capacitance (Ciss) (Max) @ Vds 262pF @ 20V
  • FET Feature -
  • Power Dissipation (Max) 1.2W (Ta)
  • Mounting Type Surface Mount
  • Supplier Device Package 3-CPH
  • Package / Case TO-236-3, SC-59, SOT-23-3
  • Base Part Number NVC3S5
  • detail P-Channel 60V 1.8A (Ta) 1.2W (Ta) Surface Mount 3-CPH

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