NTHS5441T1G
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| Manufacturer | onsemi |
| Package | 8-SMD, Flat Lead |
| Datasheet | NTHS5441 |
| Description | P-Channel 20V 3.9A (Ta) 1.3W (Ta) Surface Mount ChipFET™ |
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تغییرات قیمت
مشخصات
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi NTHS5441T1G
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 1.3W
- Total Gate Charge (Qg@Vgs) 22nC@4.5V
- Drain Source Voltage (Vdss) 20V
- Input Capacitance (Ciss@Vds) 710pF@5V
- Continuous Drain Current (Id) 3.9A
- Gate Threshold Voltage (Vgs(th)@Id) 1.2V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 46mΩ@4.5V,3.9A
- Package ChipFET-8
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs 46mOhm @ 3.9A, 4.5V
- Vgs(th) (Max) @ Id 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
- Vgs (Max) ±12V
- Input Capacitance (Ciss) (Max) @ Vds 710pF @ 5V
- FET Feature -
- Power Dissipation (Max) 1.3W (Ta)
- Mounting Type Surface Mount
- Supplier Device Package ChipFET™
- Package / Case 8-SMD, Flat Lead
- Base Part Number NTHS54
- detail P-Channel 20V 3.9A (Ta) 1.3W (Ta) Surface Mount ChipFET™
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