BD13816STU
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| Manufacturer | onsemi |
| Package | TO-225AA, TO-126-3 |
| Datasheet | BD136/138/140 |
| Description | Bipolar (BJT) Transistor PNP 60V 1.5A 1.25W Through Hole TO-126-3 |
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مشخصات BD13816STU
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi BD13816STU
- Transistor Type PNP
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 1.5A
- Power Dissipation (Pd) 1.25W
- Transition Frequency (fT) -
- DC Current Gain (hFE@Ic,Vce) 100@150mA,2V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 60V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@500mA,50mA
- Package TO-126-3
- Manufacturer onsemi
- Series -
- Packaging Bulk
- Part Status Obsolete
- Current - Collector (Ic) (Max) 1.5A
- Voltage - Collector Emitter Breakdown (Max) 60V
- Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V
- Power - Max 1.25W
- Frequency - Transition -
- Mounting Type Through Hole
- Package / Case TO-225AA, TO-126-3
- Supplier Device Package TO-126-3
- Base Part Number BD138
- detail Bipolar (BJT) Transistor PNP 60V 1.5A 1.25W Through Hole TO-126-3
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