KSD1691YSTU
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| Manufacturer | onsemi |
| Package | TO-225AA, TO-126-3 |
| Datasheet | KSD1691 |
| Description | Bipolar (BJT) Transistor NPN 60V 5A 1.3W Through Hole TO-126-3 |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi KSD1691YSTU
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 5A
- Power Dissipation (Pd) 1.3W
- Transition Frequency (fT) -
- DC Current Gain (hFE@Ic,Vce) 160@1A,2V
- Collector Cut-Off Current (Icbo) 10uA
- Collector-Emitter Breakdown Voltage (Vceo) 60V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 100mV@2A,200mA
- Package TO-126
- Manufacturer onsemi
- Series -
- Packaging Bulk
- Part Status Active
- Current - Collector (Ic) (Max) 5A
- Voltage - Collector Emitter Breakdown (Max) 60V
- Vce Saturation (Max) @ Ib, Ic 300mV @ 200mA, 2A
- Current - Collector Cutoff (Max) 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 2A, 1V
- Power - Max 1.3W
- Frequency - Transition -
- Mounting Type Through Hole
- Package / Case TO-225AA, TO-126-3
- Supplier Device Package TO-126-3
- Base Part Number KSD1691
- detail Bipolar (BJT) Transistor NPN 60V 5A 1.3W Through Hole TO-126-3
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