BD442G
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| Manufacturer | onsemi |
| Package | TO-225AA, TO-126-3 |
| Datasheet | BD442 |
| Description | Bipolar (BJT) Transistor PNP 80V 4A 36W Through Hole SOT-32 |
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تغییرات قیمت
مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi BD442G
- Transistor Type PNP
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 4A
- Power Dissipation (Pd) 36W
- Transition Frequency (fT) 3MHz
- DC Current Gain (hFE@Ic,Vce) 40@500mA,1V
- Collector Cut-Off Current (Icbo) 100uA
- Collector-Emitter Breakdown Voltage (Vceo) 80V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 800mV@300mA,3A
- Package TO-126
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Obsolete
- Current - Collector (Ic) (Max) 4A
- Voltage - Collector Emitter Breakdown (Max) 80V
- Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
- Current - Collector Cutoff (Max) 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA, 1V
- Power - Max 36W
- Frequency - Transition -
- Mounting Type Through Hole
- Package / Case TO-225AA, TO-126-3
- Supplier Device Package SOT-32
- Base Part Number BD442
- detail Bipolar (BJT) Transistor PNP 80V 4A 36W Through Hole SOT-32
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