BD237G
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| Manufacturer | onsemi |
| Package | TO-225AA, TO-126-3 |
| Datasheet | BD23x |
| Description | Bipolar (BJT) Transistor NPN 80V 2A 25W Through Hole SOT-32-3 |
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مشخصات BD237G
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi BD237G
- Transistor Type NPN
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 2A
- Power Dissipation (Pd) 25W
- Transition Frequency (fT) 3MHz
- DC Current Gain (hFE@Ic,Vce) 25@1A,2V
- Collector Cut-Off Current (Icbo) 100uA
- Collector-Emitter Breakdown Voltage (Vceo) 80V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 600mV@1A,100mA
- Package TO-225
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Active
- Current - Collector (Ic) (Max) 2A
- Voltage - Collector Emitter Breakdown (Max) 80V
- Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
- Current - Collector Cutoff (Max) 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A, 2V
- Power - Max 25W
- Frequency - Transition -
- Mounting Type Through Hole
- Package / Case TO-225AA, TO-126-3
- Supplier Device Package SOT-32-3
- Base Part Number BD237
- detail Bipolar (BJT) Transistor NPN 80V 2A 25W Through Hole SOT-32-3
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