BD682STU
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| Manufacturer | onsemi |
| Package | TO-225AA, TO-126-3 |
| Datasheet | BD676(A), 78(A), 80(A), 82(T) |
| Description | Bipolar (BJT) Transistor PNP - Darlington 100V 4A 14W Through Hole TO-126-3 |
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مشخصات BD682STU
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi BD682STU
- Transistor Type PNP
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 4A
- Power Dissipation (Pd) 14W
- Transition Frequency (fT) -
- DC Current Gain (hFE@Ic,Vce) 750@1.5A,3V
- Collector Cut-Off Current (Icbo) 200uA
- Collector-Emitter Breakdown Voltage (Vceo) 100V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 2.5V@1.5A,30mA
- Package TO-126
- Manufacturer onsemi
- Series -
- Packaging Bulk
- Part Status Active
- Current - Collector (Ic) (Max) 4A
- Voltage - Collector Emitter Breakdown (Max) 100V
- Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A
- Current - Collector Cutoff (Max) 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V
- Power - Max 14W
- Frequency - Transition -
- Mounting Type Through Hole
- Package / Case TO-225AA, TO-126-3
- Supplier Device Package TO-126-3
- Base Part Number BD682
- detail Bipolar (BJT) Transistor PNP - Darlington 100V 4A 14W Through Hole TO-126-3
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